Status of 3" 6H SiC Bulk Crystal Growth

Abstract:

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In this paper, we report on the current status of our technology for the commercial production of 3” 6H-SiC substrates, including PVT growth [1] of more than 3” diameter and up to 20 mm long 6H-SiC boules, post-growth processing of the boules, and characterization of the produced wafers. We discuss the preparation of SiC sources and seeds, the initial transient stage of the growth, the distribution of temperature in the growth crucible, and the Si/C ratio in the vapor. Special attention is given to the rise of the process stability and the reduction of crystallographic defects, including micropipes (open core screw dislocations), low-angle grain boundaries, foreign polytype inclusions, and graphite inclusions [2,3].

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

25-28

DOI:

10.4028/www.scientific.net/MSF.645-648.25

Citation:

Y. N. Makarov et al., "Status of 3" 6H SiC Bulk Crystal Growth", Materials Science Forum, Vols. 645-648, pp. 25-28, 2010

Online since:

April 2010

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Price:

$35.00

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