Status of 3" 6H SiC Bulk Crystal Growth

Yuri Makarov; D.P. Litvin; A.V. Vasiliev; A.S. Segal; S.S. Nagalyuk; Heikki Helava; M.I. Voronova; K.D. Scherbachov

doi:10.4028/www.scientific.net/MSF.645-648.25

Paper Titles

Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
p.9

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
p.13

Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
p.17

Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside
p.21

Status of 3" 6H SiC Bulk Crystal Growth
p.25

Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
p.29

Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
p.33

Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method
p.37

Purifying Mechanism in the Acheson Process - A Thermodynamic Study
p.41

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Status of 3" 6H SiC Bulk Crystal Growth

Status of 3" 6H SiC Bulk Crystal Growth

Abstract:

In this paper, we report on the current status of our technology for the commercial production of 3” 6H-SiC substrates, including PVT growth [1] of more than 3” diameter and up to 20 mm long 6H-SiC boules, post-growth processing of the boules, and characterization of the produced wafers. We discuss the preparation of SiC sources and seeds, the initial transient stage of the growth, the distribution of temperature in the growth crucible, and the Si/C ratio in the vapor. Special attention is given to the rise of the process stability and the reduction of crystallographic defects, including micropipes (open core screw dislocations), low-angle grain boundaries, foreign polytype inclusions, and graphite inclusions [2,3].