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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Growth and Characterization of Large-Diameter...

Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality

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Abstract:

In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and structural analyses using HRTEM clarified that the SF-like structures were comprised of 6H (3, 3) stacking sequences. The stacking sequences of the SF-like structures observed are different from the SFs formed in the a-face grown crystals, suggesting that it is due to 6H nucleation on {0001} plane terraces.

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Silicon Carbide and Related Materials 2009

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

9-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.9

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Online since:

April 2010

Authors:

Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, S. Satoh, Hirokatsu Yashiro, Taizo Hoshino, Hosei Hirano, Wataru Ohashi

Keywords:

A-Face, Large Area Substrates, Photoluminescence (PL), Stacking Fault

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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