Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality

Abstract:

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In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and structural analyses using HRTEM clarified that the SF-like structures were comprised of 6H (3, 3) stacking sequences. The stacking sequences of the SF-like structures observed are different from the SFs formed in the a-face grown crystals, suggesting that it is due to 6H nucleation on {0001} plane terraces.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

9-12

DOI:

10.4028/www.scientific.net/MSF.645-648.9

Citation:

M. Nakabayashi et al., "Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality ", Materials Science Forum, Vols. 645-648, pp. 9-12, 2010

Online since:

April 2010

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Price:

$35.00

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