Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside

Katarzyna Racka; Emil Tymicki; Krzysztof Grasza; Marcin Raczkiewicz; Rafał Jakieła; Michal Kozubal; Elzbieta Jurkiewicz-Wegner; Andrzej Brzozowski; Ryszard Diduszko; Miroslaw Piersa; Kinga Kościewicz; Mariusz Pawłowski; Jerzy Krupka

doi:10.4028/www.scientific.net/MSF.645-648.21

Paper Titles

High Quality 100mm 4H-SiC Substrates with Low Resistivity
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Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
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High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
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Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
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Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside
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Status of 3" 6H SiC Bulk Crystal Growth
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Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
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Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
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Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of Vanadium Doped 4H- and 6H-SiC...

Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside

Abstract:

Results of vanadium doping in PVT SiC bulk growth by the use of the seeding technique with an open seed backside are shown. Structural and electrical properties of 4H and 6H-SiC:V were investigated by a variety of experimental methods. In the crystal studied, the solubility limit of V in SiC was exceeded and structural defects consisting of V-rich precipitates occured. Electrical properties of this crystal were determined by the V3+/V4+ acceptor level. The V3+ charge state of vanadium was formed by compensating shallow donors (mainly nitrogen) and for both 4H and 6H polytypes it was detectable in optical absorption (in the near-IR range) and electron paramagnetic resonance.