Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside

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Results of vanadium doping in PVT SiC bulk growth by the use of the seeding technique with an open seed backside are shown. Structural and electrical properties of 4H and 6H-SiC:V were investigated by a variety of experimental methods. In the crystal studied, the solubility limit of V in SiC was exceeded and structural defects consisting of V-rich precipitates occured. Electrical properties of this crystal were determined by the V3+/V4+ acceptor level. The V3+ charge state of vanadium was formed by compensating shallow donors (mainly nitrogen) and for both 4H and 6H polytypes it was detectable in optical absorption (in the near-IR range) and electron paramagnetic resonance.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

21-24

DOI:

10.4028/www.scientific.net/MSF.645-648.21

Citation:

K. Racka et al., "Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside", Materials Science Forum, Vols. 645-648, pp. 21-24, 2010

Online since:

April 2010

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$35.00

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