Purifying Mechanism in the Acheson Process - A Thermodynamic Study

Li Ying Zhou; Rainer Telle

doi:10.4028/www.scientific.net/MSF.645-648.41

Paper Titles

Status of 3" 6H SiC Bulk Crystal Growth
p.25

Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
p.29

Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
p.33

Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method
p.37

Purifying Mechanism in the Acheson Process - A Thermodynamic Study
p.41

Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
p.45

Overview of 3C-SiC Crystalline Growth
p.49

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
p.55

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
p.59

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Purifying Mechanism in the Acheson Process - A Thermodynamic Study

Abstract:

To improve the purity of SiC and the yield of high purity SiC in the conventional Acheson Process, the behaviour of metal oxide impurities (Al2O3, CaO, Fe2O3 and MgO) with/without addition of sodium chloride (NaCl) is studied with the help of FactSageTM from a thermodynamic point of view. Equilibrium phases and compositions during evaporation and gas deposition are examined in the system of SiO2 + 3C. The calculation results are compared with industrial observations and published data. Purifying mechanism is clarified for the first time since the invention of the Acheson Process in 1891.