Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Frédéric Mercier; Irina G. Galben-Sandulache; Maya Marinova; Georgios Zoulis; Thierry Ouisse; Efstathios K. Polychroniadis; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.645-648.59

Paper Titles

Purifying Mechanism in the Acheson Process - A Thermodynamic Study
p.41

Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
p.45

Overview of 3C-SiC Crystalline Growth
p.49

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
p.55

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
p.59

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
p.63

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
p.67

The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method
p.71

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC...

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Abstract:

We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.