Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Abstract:

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We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

59-62

DOI:

10.4028/www.scientific.net/MSF.645-648.59

Citation:

F. Mercier et al., "Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts", Materials Science Forum, Vols. 645-648, pp. 59-62, 2010

Online since:

April 2010

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Price:

$35.00

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