Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
p.45
p.45
Overview of 3C-SiC Crystalline Growth
p.49
p.49
Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
p.55
p.55
Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
p.59
p.59
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
p.63
p.63
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
p.67
p.67
The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method
p.71
p.71
Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77
p.77
Growth and Properties of SiC On-Axis Homoepitaxial Layers
p.83
p.83
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
Abstract:
The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.
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Periodical:
Materials Science Forum (Volumes 645-648)
Pages:
63-66
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Online since:
April 2010
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© 2010 Trans Tech Publications Ltd. All Rights Reserved
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