Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?

Frédéric Mercier; Olivier Kim-Hak; Jean Lorenzzi; Jean Marc Dedulle; Gabriel Ferro; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.645-648.67

Paper Titles

Overview of 3C-SiC Crystalline Growth
p.49

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
p.55

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
p.59

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
p.63

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
p.67

The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method
p.71

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77

Growth and Properties of SiC On-Axis Homoepitaxial Layers
p.83

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
p.89

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Is the Liquid Phase a Viable Approach for Bulk...

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?

Abstract:

Despite outstanding properties, the development of 3C-SiC electronics is still suffering from the lack of bulk 3C-SiC substrates. Up to now, there is no real seed and optimized growth processes for this material. We address in this work the bulk growth of 3C-SiC by a two-step-liquid phase approach. By coupling experiments with global process simulation, we address the problems that must be overcome to consider the solution growth technique as a possible approach for the growth of bulk 3C-SiC.