Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
p.67
p.67
The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method
p.71
p.71
Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77
p.77
Growth and Properties of SiC On-Axis Homoepitaxial Layers
p.83
p.83
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
p.89
p.89
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
p.95
p.95
4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
p.99
p.99
Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors
p.103
p.103
Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
p.107
p.107
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
Abstract:
In this paper, we present first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from AIXTRON with a capability of processing 10x100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 10x100mm runs will be shown and compared to results of the 6x100mm setup of our hot-wall reactor VP2000HW by AIXTRON used for device production since 2001.
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Periodical:
Materials Science Forum (Volumes 645-648)
Pages:
89-94
Citation:
Online since:
April 2010
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© 2010 Trans Tech Publications Ltd. All Rights Reserved
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