Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors

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Thick 4H-SiC epitaxial layers have been grown using a combination of two chlorinated precursors silicon tetrachloride (SiCl4) and chloromethane (CH3Cl) at 16000C. Growth rates up to 100 m/hr have been demonstrated. The use of chloro-silane precursor eliminated the problem of homogenous nucleation of Si in the gas phase, which was significant in CH3Cl/SiH4 growth. Much higher values of Si/H2 and C/H2 ratios without morphology degradation were made possible by increasing the growth temperature from 1300 to 1600°C. Results of photoluminescence and high-resolution X-ray diffraction and time-resolved PL were used to evaluate the quality of the epitaxial layers. The crystalline quality and the growth rate achieved so far offer a promise of exceeding the state of the arts results achieved with more traditional hydro-carbon precursors.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

103-106

DOI:

10.4028/www.scientific.net/MSF.645-648.103

Citation:

S. P. Kotamraju et al., "Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors", Materials Science Forum, Vols. 645-648, pp. 103-106, 2010

Online since:

April 2010

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$35.00

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