Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors

Siva Prasad Kotamraju; Bharat Krishnan; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.645-648.103

Paper Titles

Growth and Properties of SiC On-Axis Homoepitaxial Layers
p.83

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
p.89

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
p.95

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
p.99

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors
p.103

Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
p.107

Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC
p.111

Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
p.115

Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
p.119

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Epitaxial Growth of 4H-SiC with High Growth Rate...

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors

Abstract:

Thick 4H-SiC epitaxial layers have been grown using a combination of two chlorinated precursors silicon tetrachloride (SiCl4) and chloromethane (CH3Cl) at 16000C. Growth rates up to 100 m/hr have been demonstrated. The use of chloro-silane precursor eliminated the problem of homogenous nucleation of Si in the gas phase, which was significant in CH3Cl/SiH4 growth. Much higher values of Si/H2 and C/H2 ratios without morphology degradation were made possible by increasing the growth temperature from 1300 to 1600°C. Results of photoluminescence and high-resolution X-ray diffraction and time-resolved PL were used to evaluate the quality of the epitaxial layers. The crystalline quality and the growth rate achieved so far offer a promise of exceeding the state of the arts results achieved with more traditional hydro-carbon precursors.

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Materials Science Forum (Volumes 645-648)

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103-106

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.103

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April 2010

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Siva Prasad Kotamraju, Bharat Krishnan, Yaroslav Koshka

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Epitaxial Growth

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