4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Kazutoshi Kojima; Sachiko Ito; Junji Senzaki; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.645-648.99

Paper Titles

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77

Growth and Properties of SiC On-Axis Homoepitaxial Layers
p.83

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
p.89

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
p.95

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
p.99

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors
p.103

Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
p.107

Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC
p.111

Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
p.115

HomeMaterials Science ForumMaterials Science Forum Vols. 645-6484H-SiC Homoepitaxial Growth on Vicinal-Off Angled...

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Abstract:

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

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Materials Science Forum (Volumes 645-648)

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99-102

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.99

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Online since:

April 2010

Authors:

Kazutoshi Kojima, Sachiko Ito, Junji Senzaki, Hajime Okumura

Keywords:

Homoepitaxy, Step Bunching

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