Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Abstract:

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A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures has been done in order to get good quality epilayers on 8° off and on-axis substrates while using very low carrier flows. Hydrogen chloride (HCl) was added to the standard gas mixture to keep a high growth rate and to get homo-polytypic growth on on-axis substrates. The carrier flow was reduced down to one order of magnitude less than under typical growth condition. By lowering the process pressure it was possible to reduce precursor depletion along the susceptor which improved the thickness uniformity to below 2% variation (σ/mean) over a 2” diameter wafer.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

95-98

DOI:

10.4028/www.scientific.net/MSF.645-648.95

Citation:

A. Henry et al., "Concentrated Chloride-Based Epitaxial Growth of 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 95-98, 2010

Online since:

April 2010

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Price:

$35.00

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