Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescence, deep level transient spectroscopy, microwave photoconductive decay, synchrotron topography and room temperature PL imaging. The carrier lifetime of thick epilayers with or without the application of the C+-implantation/annealing method and extended defects in the epilayers grown on 8º and 4º off substrates are discussed.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
H. Tsuchida et al., "Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 77-82, 2010