Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Abstract:

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Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescence, deep level transient spectroscopy, microwave photoconductive decay, synchrotron topography and room temperature PL imaging. The carrier lifetime of thick epilayers with or without the application of the C+-implantation/annealing method and extended defects in the epilayers grown on 8º and 4º off substrates are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

77-82

DOI:

10.4028/www.scientific.net/MSF.645-648.77

Citation:

H. Tsuchida et al., "Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 77-82, 2010

Online since:

April 2010

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Price:

$35.00

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