Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Hidekazu Tsuchida; Masahiko Ito; Isaho Kamata; Masahiro Nagano; Tetsuya Miyazawa; Norihiro Hoshino

doi:10.4028/www.scientific.net/MSF.645-648.77

Paper Titles

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
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Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
p.63

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
p.67

The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method
p.71

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77

Growth and Properties of SiC On-Axis Homoepitaxial Layers
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High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
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Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
p.95

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Low-Pressure Fast Growth and Characterization of...

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Abstract:

Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescence, deep level transient spectroscopy, microwave photoconductive decay, synchrotron topography and room temperature PL imaging. The carrier lifetime of thick epilayers with or without the application of the C+-implantation/annealing method and extended defects in the epilayers grown on 8º and 4º off substrates are discussed.

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Materials Science Forum (Volumes 645-648)

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77-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.77

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Online since:

April 2010

Authors:

Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano, Tetsuya Miyazawa, Norihiro Hoshino

Keywords:

Basal Plane Dislocation (BPD), Carrier Lifetime, Epitaxial Growth, Stacking Fault

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