Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process

Mamoru  Imade; Shin Takeuchi; Masahiro Uemura; Masashi  Yoshimura; Yasuo  Kitaoka; Takatomo Sasaki; Yusuke  Mori; Shinroh Itoh; Hiroyuki Okuda; Masanobu Yamazaki

doi:10.4028/www.scientific.net/MSF.645-648.45

Paper Titles

Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
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Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
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Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method
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Purifying Mechanism in the Acheson Process - A Thermodynamic Study
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Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
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Overview of 3C-SiC Crystalline Growth
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Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
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Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
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Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Growth of Single-Phase 2H-SiC Layers by...

Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process

Abstract:

We attempted the vapor–liquid–solid (VLS) growth of SiC film in Si-Li solution using gaseous CH4 as a carbon source at 900 oC. A 100-m-thick liquid-phase epitaxy (LPE) layer was obtained on a 4H-SiC (0001) substrate under CH4 pressure of 0.9 MPa. X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HR-TEM) measurement showed that the LPE layer was single-phase 2H-SiC. We concluded that VLS growth in Si-Li solution using gaseous CH4 as a carbon source is useful for growing single-phase 2H-SiC.

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Materials Science Forum (Volumes 645-648)

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45-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.45

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Online since:

April 2010

Authors:

Mamoru Imade, Shin Takeuchi, Masahiro Uemura, Masashi Yoshimura, Yasuo Kitaoka, Takatomo Sasaki, Yusuke Mori, Shinroh Itoh, Hiroyuki Okuda, Masanobu Yamazaki

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Liquid Phase Epitaxy (LPE), Vapor-Liquid-Solid Growth

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