Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process

Abstract:

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We attempted the vapor–liquid–solid (VLS) growth of SiC film in Si-Li solution using gaseous CH4 as a carbon source at 900 oC. A 100-m-thick liquid-phase epitaxy (LPE) layer was obtained on a 4H-SiC (0001) substrate under CH4 pressure of 0.9 MPa. X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HR-TEM) measurement showed that the LPE layer was single-phase 2H-SiC. We concluded that VLS growth in Si-Li solution using gaseous CH4 as a carbon source is useful for growing single-phase 2H-SiC.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

45-48

DOI:

10.4028/www.scientific.net/MSF.645-648.45

Citation:

M. Imade et al., "Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process", Materials Science Forum, Vols. 645-648, pp. 45-48, 2010

Online since:

April 2010

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$35.00

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