Deposition of GaN Films on Freestanding CVD Thick Diamond Films

Abstract:

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High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1740-1743

DOI:

10.4028/www.scientific.net/MSF.654-656.1740

Citation:

D. Zhang et al., "Deposition of GaN Films on Freestanding CVD Thick Diamond Films", Materials Science Forum, Vols. 654-656, pp. 1740-1743, 2010

Online since:

June 2010

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Price:

$35.00

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