Deposition of GaN Films on Freestanding CVD Thick Diamond Films
High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.
Jian-Feng Nie and Allan Morton
D. Zhang et al., "Deposition of GaN Films on Freestanding CVD Thick Diamond Films", Materials Science Forum, Vols. 654-656, pp. 1740-1743, 2010