Deposition of GaN Films on Freestanding CVD Thick Diamond Films

Dong Zhang; Yi Zhen Bai; Fu Wen Qin; Ji Ming Bian

doi:10.4028/www.scientific.net/MSF.654-656.1740

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Fabrication of Numerous Ferromagnetic Metal Nanowires Using Electrodeposition Technique
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Fabrication of Co/Cu Multilayered Nanowires Using a Pulsed Current Deposition Technique
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Electrodeposition of ZnTe Compound Semiconductors from Aqueous Solution
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The Effect of Cobalt Addition on Structural and Magnetic Properties of Electrodeposited Iron-Platinum Nanocrystalline Thin Films
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Deposition of GaN Films on Freestanding CVD Thick Diamond Films
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The Preparation for Cu(Sn) Films of Barrierless Interconnection
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The Effects of Substrate Temperature on the Composition and IR Transmission Properties of Germanium Carbon Films Deposited by Reactive RF Magnetron Sputtering
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Technological Parameters and Electrical Properties of Ti/TiN Multilayer Films Prepared by Magnetron Sputtering
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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656Deposition of GaN Films on Freestanding CVD Thick...

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

Abstract:

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

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Materials Science Forum (Volumes 654-656)

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1740-1743

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https://doi.org/10.4028/www.scientific.net/MSF.654-656.1740

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June 2010

Authors:

Dong Zhang, Yi Zhen Bai, Fu Wen Qin, Ji Ming Bian

Keywords:

Diamond Film, ECR-PEMOCVD, GaN Film, Nitriding Time, SAW Device

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