ZnTe compound semiconductors were synthesized in acidic aqueous solution using a pulsed current electrodeposition technique. The optimum condition to obtain ZnTe deposits was determined by the cathodic polarization curves measured at a wide potential range. During the co-deposition of Zn and Te, under potential deposition (UPD) of Zn was observed. Increasing the solution temperature up to 353 K, UPD of Zn was promoted by the formation of Zn(OH)2. Crystal phase, structure and chemical composition of electrodeposited ZnTe was controlled by the solution composition and electrolysis condition. The band gap energy of ZnTe films annealed at 573 K was close to 2.26 eV.