Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method

Abstract:

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Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1716-1719

DOI:

10.4028/www.scientific.net/MSF.654-656.1716

Citation:

F. W. Qin et al., "Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method", Materials Science Forum, Vols. 654-656, pp. 1716-1719, 2010

Online since:

June 2010

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$35.00

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