Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method

Fu Wen Qin; Ai Min Wu; Feng Chun Liu; Bao Dan Liu; Xin Jiang

doi:10.4028/www.scientific.net/MSF.654-656.1716

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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656Effect of Nitridation on GaN Film Grown on Glass...

Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method

Abstract:

Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.

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Materials Science Forum (Volumes 654-656)

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1716-1719

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.654-656.1716

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Online since:

June 2010

Authors:

Fu Wen Qin, Ai Min Wu, Feng Chun Liu, Bao Dan Liu, Xin Jiang

Keywords:

Gallium Nitride (GaN), Glass Substrate, Nitridation, PEMOCVD

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References

[1] O. Jani, I. Ferguson, C. Honsberg, S. Kurtz: Appl. Phys. Lett. Vol. 91 (2007), p.132117.

DOI: 10.1063/1.2793180

Google Scholar

[2] S.J. Pearton, C.R. Abernathy, F. Ren: Gallium Nitride Processing for Electronics, Sensors and Spintronics (springer, London, 2006 ).

DOI: 10.1007/1-84628-359-0

Google Scholar

[3] Y. Sato, N. Takahashi, S. Sto: Jpn. J. Appl. Appl. Phys. Vol. 35 (1996), p. L838.

Google Scholar

[4] G. Sinha, K. Adhikary, S. Chaudhuri: Appl. Surf. Sci. Vol. 254 (2008), p.5257.

Google Scholar

[5] K. Iwata, H. Asahi, K. Asami: J. Crystal Growth Vol. 189/190 (1998), p.218.

Google Scholar

[6] Y. Sato: J. Crystal Growth Vol. 189-190 (1998), p.42.

Google Scholar

[7] A. Raveh, J. Brewer, E.A. Irene: J. Vac. Sci. Technol A Vol. 19 (2001), p.9.

Google Scholar

[8] Y. Xu, B. Gu, F.W. Qin: J. Vac. Sci. Technol A Vol. 22 (2004), p.302.

Google Scholar

[9] P. Sagan, G. Wisz, M. Bester, I.O. Rudyj, I.V. Kurilo, I.E. Lopatynskij, I.S. Virt, M. Kuzma, R. Ciach: Thin Solid Films Vol. 480-481 (2005), p.318.

DOI: 10.1016/j.tsf.2004.11.016

Google Scholar

[10] F.W. Qin, B. Gu, Y. Xu, D.Z. Yang: Chinese J. Semiconductors Vol. 24 (2003), p.668.

Google Scholar