The Preparation for Cu(Sn) Films of Barrierless Interconnection
In this study, Cu films doped with different Sn concentrations from 0.6-1.4 at.% were prepared by magnetron co-sputtering. The electrical resistivities and microstructures of Cu (Sn) films after annealings were investigated. The results showed that a sharp increase of the resistivity of Cu (1.4 at.% Sn) and Cu (1.1 at.% Sn) films were found after annealing above at 500°C. The existence of 0.6 at.% Sn in the Cu film is in solid solution state. A minimum electrical resistivity value of ~3.2μΩ•cm was obtained after annealing at 600°C for 1h . Even after a annealing at 700°C, the Cu/Si interface of Cu (0.6 at.% Sn) film still remained sharp without any Cu-Si and Cu-Sn compounds. The results confirmed that the lower resistivity and higher stability of Cu films can be achieved by strictly control of the doping concentrations and the existing state (solid solution without compounds and precipitates) of Sn element.
Jian-Feng Nie and Allan Morton
L. Y. Xu et al., "The Preparation for Cu(Sn) Films of Barrierless Interconnection", Materials Science Forum, Vols. 654-656, pp. 1744-1747, 2010