Excellent Surface Passivation by Silicon Dioxide Grown with a Electrochemical Method

Abstract:

A novel method to grow silicon dioxide layers for passivating the silicon surface is given more attention. SiO₂ was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N₂ media at 900°C for 20min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arrived at 29.8μs and 29.75μs, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect of the FGA, annealing at low temperature and annealing in N₂ or O₂ containing medium at high temperature were investigated.

• Periodical: Materials Science Forum (Volume 685)
• Pages: 48-54
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.685.48
• Online since: June 2011
• Authors: Jun Zhang, Wei Ming Lu, Chun Lan Zhou, Zhen Li Wen, Lei Zhao, Hai Ling Li, Hong Wei Diao, Yao Zhang, Wen Jing Wang
• Keywords: Anneal, Nitric Acid, Passivation, Silicon, Silicon Dioxide, SiO₂, Voltage

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