Excellent Surface Passivation by Silicon Dioxide Grown with a Electrochemical Method

Abstract:

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A novel method to grow silicon dioxide layers for passivating the silicon surface is given more attention. SiO2 was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N2 media at 900°C for 20min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arrived at 29.8μs and 29.75μs, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect of the FGA, annealing at low temperature and annealing in N2 or O2 containing medium at high temperature were investigated.

Info:

Periodical:

Edited by:

Kunyuan Gao, Shaoxiong Zhou, Xinqing Zhao

Pages:

48-54

DOI:

10.4028/www.scientific.net/MSF.685.48

Citation:

J. Zhang et al., "Excellent Surface Passivation by Silicon Dioxide Grown with a Electrochemical Method", Materials Science Forum, Vol. 685, pp. 48-54, 2011

Online since:

June 2011

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$35.00

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