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Integration between LiNbO3 Ferroelectric Film and AlGaN/GaN System

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Abstract:

LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated epitaxially. The preferable C+ oriented domains in LNO film lead to the formation of the spontaneous ferroelectric polarization. As a result, the sheet electron concentration of the 2DEG (ns) decreased from 1.13×1013 cm-2 to 1.04×1013 cm-2 when a LNO film deposited on the AlGaN/GaN. The ns decreased nonlinearly with decreasing the temperature. Additionally, the electron mobility for the LNO/AlGaN/GaN heterostructure decreased greatly compared with that for AlGaN/GaN heterostructure, which was caused by the non-uniform domain structure in the LNO film. By external bias switching the ferroelectric polarization, the relative enhancement of the 2DEG, about 7.68×1011/cm2, could be accessible from capacitance-voltage measurement. These results indicated that ferroelectric films combined with AlGaN/GaN would hold promise for next-generation GaN-based memory devices.

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Periodical:

Materials Science Forum (Volume 687)

Pages:

303-308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.687.303

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Online since:

June 2011

Authors:

L. Z. Hao, Jun Zhu, Y. R. Li

Keywords:

C-V, Ferroelectric, Gallium Nitride (GaN), LiNbO3 Film, Polarisation

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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