Influence of Nickel Film Thicknesses on Dark Current-Voltage Characteristics of Silicon Solar Cells

Abstract:

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.

• Periodical: Materials Science Forum (Volume 694)
• Pages: 672-675
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.694.672
• Online since: July 2011
• Authors: Tao Li, Chun Lan Zhou, Zhen Gang Liu, Wen Jing Wang, Yang Song, Zhi Hua Gao, Ye Duan, You Zhong Li
• Keywords: Dark Current-Voltage Characteristics, Light-Induced Plating, Nickel Film, Silicon Solar Cell

References

[1] J. Hyung Lee, Y. Hyun Lee, J. Yong Ahn, J.-W. Jeong, Analysis of series resistance of crystalline silicon solar cell with two-layer front metallization based on light-induced plating, Sol. Energy Mater. Sol. Cells, 95 (2011) 22-25.

DOI: 10.1016/j.solmat.2010.04.065

[2] M. Hörteis, J. Bartsch, S. Binder, A. Filipovic, J. Merkel, V. Radtke, S. Glunz, Electrical properties of fine line printed and light-induced plated contacts on silicon solar cells, Prog. Photovolt: Res. Appl., 18 (2010) 240-248.

DOI: 10.1002/pip.938

[3] J. Bartsch, V. Radtke, C. Schetter, S. Glunz, Electrochemical methods to analyse the light-induced plating process, Journal of Applied Electrochemistry, 40 (2010) 757-765.

DOI: 10.1007/s10800-009-0054-5

[4] A. Mette, C. Schetter, D. Wissen, S. Lust, S. Glunz, G. Willeke, Increasing the efficiency of screen-printed silicon solar cells by light-induced silver plating, in: Proceedings of the 4th IEEE World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, 2006, pp.1056-1059.

DOI: 10.1109/wcpec.2006.279322

[5] A. Kaminski, J.J. Marchand, A. Laugier, I-V methods to extract junction parameters with special emphasis on low series resistance, Solid-State Electronics, 43 (1999) 741-745.

DOI: 10.1016/s0038-1101(98)00338-4

[6] M. Chegaar, Z. Ouennoughi, F. Guechi, Extracting DC parameters of solar cells under illumination, Vacuum, 75 (2004) 367-372.

DOI: 10.1016/j.vacuum.2004.05.001