An EBSD Study of Gallium Arsenide Nanopillars

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Abstract:

GaAs nanopillars show promise for energy applications. Understanding, characterizing and modifying the structure of the pillars will be very important for optimizing the properties of the assemblies. EBSD was used to investigate the orientations of these nanometer structures.

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Periodical:

Materials Science Forum (Volumes 702-703)

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916-919

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Online since:

December 2011

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] Prikhodko, S.V., Sitzman, S., Gambin, V., Kodambaka, S., In-situ electron backscattered diffraction of individual GaAs nanowires, Ultramicroscopy 109 (2008).

DOI: 10.1016/j.ultramic.2008.09.006

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