Characterization of SiC JFET in Novel Packaging for 1 MHz Operation

Katsuya Okamura; Keiichi Ise; Masayoshi Wake; Yutaka Osawa; Koichi Takaki; Ken Takayama

doi:10.4028/www.scientific.net/MSF.717-720.1029

Paper Titles

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
p.1013

Demonstration of SiC Vertical Trench JFET Reliability
p.1017

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing
p.1021

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
p.1025

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation
p.1029

Packaging Technologies for 500°C SiC Electronics and Sensors
p.1033

High Voltage SiC Vertical JFET for High Power RF Applications
p.1037

Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Characterization of SiC JFET in Novel Packaging...

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation

Abstract:

A high power discrete SiC-JFET package for accelerator applications has been developed and tested. Successful operation with a dc voltage of 1 kV, a drain current of 27 A, and a repetition rate of 1 MHz was confirmed. Thermal analysis was carefully attempted. The heat dissipation capacity of 235 W with a water-cooled heat sink and the thermal resistance from its junction to outer-surface of 0.56 K/W were demonstrated. These results exhibit the SiC-JFET is a promising device for a switching power supply in future digital accelerators.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1029-1032

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1029

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Online since:

May 2012

Authors:

Katsuya Okamura, Keiichi Ise, Masayoshi Wake, Yutaka Osawa, Koichi Takaki, Ken Takayama

Keywords:

Digital Accelerator, Junction Field Effect Transistor (JFET), Pulsed Power

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