High Voltage SiC Vertical JFET for High Power RF Applications

Christian Hecht; Rudolf Elpelt; Reinhold Schörner; Roland Irsigler; Oliver Heid

doi:10.4028/www.scientific.net/MSF.717-720.1037

Paper Titles

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing
p.1021

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
p.1025

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation
p.1029

Packaging Technologies for 500°C SiC Electronics and Sensors
p.1033

High Voltage SiC Vertical JFET for High Power RF Applications
p.1037

Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049

High Performance SiC IEMOSFET/SBD Module
p.1053

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720High Voltage SiC Vertical JFET for High Power RF...

High Voltage SiC Vertical JFET for High Power RF Applications

Abstract:

We present the optimization of a standard lateral channel vertical JFET for high-frequency high-power applications. It will be shown that SiC JFETs are well suited to fulfill the requirements of certain RF applications when compared to silicon devices. Simulations covering the electrical characteristics will be given together with calculations considering the self-heating of the chip in pulsed-power applications and the corresponding decrease in saturation current. The gate-signal propagation will be analyzed for different chip layouts and the effect on switching speed will be described. Electrical results will demonstrate that the optimized JFET is suitable for RF-transmitter applications, like e.g. solid state RF modules as Klystron replacements in linear accelerators.