High Performance SiC IEMOSFET/SBD Module

Shinsuke Harada; Yasuyuki Hoshi; Yuichi Harada; Takashi Tsuji; Akimasa Kinoshita; Mitsuo Okamoto; Youichi Makifuchi; Yasuyuki Kawada; Kouji Imamura; Masahide Gotoh; Takeshi Tawara; Shinichi Nakamata; T. Sakai; Fumikazu Imai; Naoyuki Ohse; Mina Ryo; Atsushi Tanaka; Kazuo Tezuka; Tatsurou Tsuyuki; Saburou Shimizu; Noriyuki Iwamuro; Yoshiyuki Sakai; Hiroshi Kimura; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.717-720.1053

Paper Titles

High Voltage SiC Vertical JFET for High Power RF Applications
p.1037

Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049

High Performance SiC IEMOSFET/SBD Module
p.1053

Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
p.1059

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
p.1065

690V, 1.00 mΩcm² 4H-SiC Double-Trench MOSFETs
p.1069

SiC MOSFET Reliability Update
p.1073

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720High Performance SiC IEMOSFET/SBD Module

High Performance SiC IEMOSFET/SBD Module

Abstract:

SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high channel mobility in which the channel region is the p-type carbon-face epitaxial layer with low acceptor concentration. Elemental technologies for the high channel mobility and the high reliability of the gate oxide have been developed to realize the excellent characteristics by the IEMOSFET. The SBD was designed so as to minimize the forward voltage drops and the reverse leakage current. For the fabrication of these SiC power devices, the mass production technology such as gate oxidation, ion implantation and following activation annealing have been also developed.

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Materials Science Forum (Volumes 717-720)

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1053-1058

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1053

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Online since:

May 2012

Keywords:

Channel Mobility, Gate Oxide, IEMOSFET, MOSFET, Power Module, Reliability, SBD

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References

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