SiC MOSFET Reliability Update

Mrinal K. Das; Sarah K. Haney; Jim Richmond; Anthony Olmedo; Q. Jon Zhang; Zoltan Ring

doi:10.4028/www.scientific.net/MSF.717-720.1073

Paper Titles

High Performance SiC IEMOSFET/SBD Module
p.1053

Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
p.1059

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
p.1065

690V, 1.00 mΩcm² 4H-SiC Double-Trench MOSFETs
p.1069

SiC MOSFET Reliability Update
p.1073

Material Defects and Rugged Electrical Power Switching in Semiconductors
p.1077

Comparative Study of SiC MOSFETs in High Voltage Switching Operation
p.1081

Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
p.1085

4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications
p.1089

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720SiC MOSFET Reliability Update

SiC MOSFET Reliability Update

Abstract:

Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1073-1076

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1073

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Online since:

May 2012

Authors:

Mrinal K. Das, Sarah K. Haney, Jim Richmond, Anthony Olmedo, Q. Jon Zhang, Zoltan Ring

Keywords:

Gate Oxide, HTGB, MOS Capacitor, MOSFET, MTTF, Q_BD, Reliability, TDDB

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References

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