Material Defects and Rugged Electrical Power Switching in Semiconductors

Abstract:

A paradigm shift in the development and utilization of power semiconductor switch technology is proposed. This new "top down" approach begins with the field-reliability of a power semiconductor switch in a power converter circuit is subjected to long-term repetitive-switching under stressful field-operating conditions. This approach is derived from extensive field-reliability data collected on state-of-the-art silicon power MOSFETs in compact computer/telecom power supplies that clearly suggests that power MOSFET field-failures were primarily caused by bulk material defects. A careful survey of power switch technologies reported to-date in Silicon Carbide (SiC) and Gallium Nitride (GaN) further suggests that excessive bulk material defects have predominantly hindered the development and commercialization of cost-effective, high-performance, and reliable high-power devices. A reliability-driven approach is likely to "unlock" the vast potential of SiC (and GaN for moderate power levels) power device technology for high-voltage and high-power switching electronics in order to impact transformative changes.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1077-1080
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1077
• Online since: May 2012
• Authors: Krishna Shenai, Philip G. Neudeck, M. Dudley, Robert F. Davis
• Keywords: Cost, Defect, High Current, High Voltage (HV), Performance, Power Switch, Reliability

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