Integration of Temperature and Current Sensors in 4H-SiC VDMOS

Maxime Berthou; Philippe Godignon; Pierre Brosselard; Dominique Tournier; José Millán

doi:10.4028/www.scientific.net/MSF.717-720.1093

Paper Titles

Material Defects and Rugged Electrical Power Switching in Semiconductors
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Comparative Study of SiC MOSFETs in High Voltage Switching Operation
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Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
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4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications
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Integration of Temperature and Current Sensors in 4H-SiC VDMOS
p.1093

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching
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Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs
p.1101

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
p.1105

High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Integration of Temperature and Current Sensors in...

Integration of Temperature and Current Sensors in 4H-SiC VDMOS

Abstract:

Silicon Carbide VDMOS with integrated current and temperature sensors have been successfully fabricated without degradation of the chip forward or reverse characteristics due to the sensors. The temperature sensors show impedance correlated to the temperature, which permits to track the drift region’s temperature of the device. We have shown that the sensor current ratio can be influenced by the current spreading in the drift layer, especially when the channel resistance contribution is reduced. This aspect will be more critical on VDMOS with low channel resistance. Also, the sensor current ratio stability will be improved on devices with larger active area or thinner drift layer. Integration of such sensors will permit to monitor and protect innovative power electronic systems using SiC chips.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1093-1096

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1093

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Online since:

May 2012

Authors:

Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán

Keywords:

Current Sensor, Integration, Silicon Carbide (SiC), Temperature Sensor, VDMOS

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