SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching

Shiro Hino; Naruhisa Miura; Akihiko Furukawa; Shoyu Watanabe; Yukiyasu Nakao; Shuhei Nakata; Masayuki Imaizumi; Hiroaki Sumitani; Tatsuo Oomori

doi:10.4028/www.scientific.net/MSF.717-720.1097

Paper Titles

Comparative Study of SiC MOSFETs in High Voltage Switching Operation
p.1081

Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
p.1085

4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications
p.1089

Integration of Temperature and Current Sensors in 4H-SiC VDMOS
p.1093

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching
p.1097

Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs
p.1101

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
p.1105

High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
p.1109

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
p.1113

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720SiC-MOSFET Structure Enabling Fast Turn-On and...

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching

Abstract:

High speed switching is desired to reduce switching losses of SiC-MOSFETs. In order to realize SiC-MOSFETs capable of high speed switching, we numerically evaluated the electric field induced in SiC-MOSFETs during switching using an equivalent circuit model. Based on the evaluation, we designed a SiC-MOSFET, which successfully demonstrated high speed switching with a dV/dt of over 70 V/ns.