4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications

Walter Daves; A. Krauss; V. Häublein; A.J. Bauer; L. Frey

doi:10.4028/www.scientific.net/MSF.717-720.1089

Paper Titles

SiC MOSFET Reliability Update
p.1073

Material Defects and Rugged Electrical Power Switching in Semiconductors
p.1077

Comparative Study of SiC MOSFETs in High Voltage Switching Operation
p.1081

Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
p.1085

4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications
p.1089

Integration of Temperature and Current Sensors in 4H-SiC VDMOS
p.1093

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching
p.1097

Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs
p.1101

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
p.1105

HomeMaterials Science ForumMaterials Science Forum Vols. 717-7204H-SiC MOSFETs with a Stable Protective Coating...

4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications

Abstract:

In this work we present 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with a stable protective coating for harsh environment applications. Both inversion channel (IC) and buried channel (BC) MOSFETs were realized on n-4H-SiC substrates with a p-epilayer. Stacked ONO gate dielectric and Ti/TiN/Pt/Ti interconnect were used. Ni and Ti ohmic contacts in combination with a-SiOx/a-SiNy and a-SiOx/a-SiC protective coatings were compared. The MOSFETs showed excellent transistor characteristics up to 600 °C and exceptional stability during long-term aging at 600 °C in air and during accelerated aging at 700 °C including temperature cycling and air/moisture environment.