4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

Sergey L. Rumyantsev; Michael S. Shur; Michael E. Levinshtein; Pavel A. Ivanov; John W. Palmour; Anant K. Agarwal; Sarit Dhar

doi:10.4028/www.scientific.net/MSF.717-720.1105

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-7204H-SiC MOSFETs with Si-Like Low-Frequency Noise...

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

Abstract:

4H-SiC MOSFETs with an epitaxial channel and NO postoxidation annealing have Si-like dependencies of noise on gate voltage. Such dependencies indicate that the density of the negatively charged oxide traps responsible for 1/f noise, N_tv, does not depend on the position of the Fermi level. The N_tv was found to be ~ 2×10¹⁹ cm^-3eV^-1. This value is considerably smaller than previously measured for transistors with ion implanted channels.

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Materials Science Forum (Volumes 717-720)

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1105-1108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1105

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Online since:

May 2012

Authors:

Sergey L. Rumyantsev, Michael S. Shur, Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Anant K. Agarwal, Sarit Dhar

Keywords:

1/f Noise, Low Frequency Noise, SiC MOSFETs

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References

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