Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Bernd Zippelius; Martin Hauck; Svetlana Beljakowa; Heiko B. Weber; M. Krieger; Hiroyuki Nagasawa; Hidetsugu Uchida; Gerhard Pensl; Adolf Schöner

doi:10.4028/www.scientific.net/MSF.717-720.1113

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Dependence of the Channel Mobility in 3C-SiC...

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Abstract:

The channel mobility in 3C-SiC n-MOSFETs is investigated by current-voltage and Hall-effect measurements. For comparison, these techniques are also applied to 3C-SiC bulk rods. It turns out that the channel mobility depends on the orientation of the crystal and channel length. The observed results are traced back to the influence of Si-terminated stacking faults (Si-SFs), to the resistance of the drain/source contact and to the warping of the wafer caused by the special growth technique.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1113-1116

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1113

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Online since:

May 2012

Authors:

Bernd Zippelius, Martin Hauck, Svetlana Beljakowa, Heiko B. Weber, M. Krieger, Hiroyuki Nagasawa, Hidetsugu Uchida, Gerhard Pensl, Adolf Schöner

Keywords:

3C-SiC n-MOSFET, Anisotropy, Channel Mobility, Contact Resistance, Stacking Fault, Wafer Warping

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References

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