1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Ranbir Singh; Stoyan  Jeliazkov; Eric  Lieser

doi:10.4028/www.scientific.net/MSF.717-720.1127

Paper Titles

High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
p.1109

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
p.1113

Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process
p.1117

Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²
p.1123

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
p.1127

Investigation of Current Gain Degradation in 4H-SiC Power BJTs
p.1131

Development of 15 kV 4H-SiC IGBTs
p.1135

Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
p.1139

An Investigation of Material Limit Characteristics of SiC IGBTs
p.1143

HomeMaterials Science ForumMaterials Science Forum Vols. 717-7201200 V-Class 4H-SiC “Super” Junction Transistors...

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Abstract:

1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are distinguished by low leakage currents of 2. Two-stage cascaded SJTs display a record high current gain of 3475. Results from detailed on-state, blocking, switching and reliability characterization of 1200 V-class 4 mm² and 16 mm² SiC SJTs are presented in this paper.