An Investigation of Material Limit Characteristics of SiC IGBTs

Abstract:

The impact of device concepts of Si insulated gate bipolar transistors (IGBTs) such as injection-enhanced IGBT (IEGT), high-conductivity IGBT (HiGT), and Si-limit IGBT on the performance of SiC IGBTs is examined. We first show that the forward characteristics of the original type of planer SiC IGBTs are much worse than those of SiC PiN diodes, even if the carrier lifetime is improved. Next, we show that the forward characteristics of SiC IEGTs and SiC HiGTs are comparable to those of SiC PiN diodes. Thus, device concepts of Si IGBTs are effective in improving the device performance of SiC IGBTs. Finally, it is shown that a SiC-limit IGBT can be realized when the mesa width is less than 0.5 μm.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1143-1146
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1143
• Online since: May 2012
• Authors: Tetsuo Hatakeyama, Kenji Fukuda, Hajime Okumura
• Keywords: FS-IGBT, HIGT, Hole Barrier, IEGT, Insulated Gate Bipolar Transistor (IGBT), MOS, PiN Diode

References

[1] L. Storasta and H. Tsuchida, Appl. Phys. Lett. 90, 062116 (2007)

[2] T. Hiyoshi and T. Kimoto, Appl. Phys. Express 2, 041101 (2009)

[3] M. Mori, Y. Uchino, J. Sakano, and H. Kobayashi, Proc. of the 10th International Symposium on Power Semiconductor & IC's, (1998), 429-432

[4] M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue and A. Nakagawa, IEDM'93. Technical Digest, (1993), 679-682

[5] A. Nakagawa, Proc. of the International Conference on VLSI Technology, Systems and Applications 2008, (2008) 103-104.

[6] A. Nakagawa, Proc. of the 18th International Symposium on Power Semiconductor & IC's, (2006), 1-4