12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Q. Jon Zhang; Anant K. Agarwal; Craig Capell; L. Cheng; Michael  J. O'Loughlin; Albert A. Burk; John W. Palmour; Sergey L. Rumyantsev; T. Saxena; Michael E. Levinshtein; A. Ogunniyi; Heather O'Brien; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.717-720.1151

Paper Titles

Development of 15 kV 4H-SiC IGBTs
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Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
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An Investigation of Material Limit Characteristics of SiC IGBTs
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Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair
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12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
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High dI/dt Pulse Switching of 1.0 cm² SiC GTOs
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Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications
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Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor
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Comparison of SiC Thyristors with Differently Etched JTEs
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-72012 kV, 1 cm2 SiC GTO Thyristors with Negative...

12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination

Abstract:

In this paper, for the first time, we report 12 kV, 1 cm² SiC GTOs demonstrated with a novel negative bevel termination, which improves the breakdown voltage by >3.5 kV compared to the conventional multiple-zone Junction Termination Extension (JTE). The significant improvement in the blocking voltage was attributed to the elimination of the electrical field crowding in the periphery of the mesa with conventional JTE termination. This new termination has been used in both electrically and optically triggered SiC GTOs. An ultrafast turn-on speed of 70 ns has been measured on 12 kV, 1 cm² SiC light triggered GTOs.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1151-1154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1151

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Online since:

May 2012

Authors:

Q. Jon Zhang, Anant K. Agarwal, Craig Capell, L. Cheng, Michael J. O'Loughlin, Albert A. Burk, John W. Palmour, Sergey L. Rumyantsev, T. Saxena, Michael E. Levinshtein, A. Ogunniyi, Heather O'Brien, Charles Scozzie

Keywords:

Gate Turn-Off Thyristor, GTO, Light-Triggered GTO, Silicon Carbide (SiC), Termination

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References

[1] R. L. Davies, F. E.Gentry, IEEE Trans. on Elctron. Dev., Vol.11, No. 7, 1973. pp.313-323.

Google Scholar

[2] A. Agarwal, Q. Zhang, C. Capell, A. Burk, M. O¢Loughlin, J. Palmour, V. Temple, A. Lelis, H. O¢Brian, and C. Scozzie," "9 kV,1 cm´1 cm SiC Super GTO Technology Development for Pulse Power". In Proc 17th IEEE PPC, Washington (DC); 2009.

DOI: 10.1109/ppc.2009.5386305

Google Scholar

[3] Q. Zhang, R. Callanan, M. Das, S. Ryu, A. Agarwal, and J. Palmour, "SiC Power Devices for Microgrids", IEEE, Trans. Power Electron. Vol. 25, No. 12, 2010, pp.2889-2896.

DOI: 10.1109/tpel.2010.2079956

Google Scholar

[4] M. Levinshtein, P. Ivanov, A. Agarwal, and J. Palmour, "Optical Switch-on of Silicon Carbide Thyristor", Electron. Lett., Vol. 38, No. 12, 6th June 2002.

DOI: 10.1049/el:20020415

Google Scholar