Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications

Siddarth G. Sundaresan; Eric  Lieser; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.717-720.1159

Paper Titles

An Investigation of Material Limit Characteristics of SiC IGBTs
p.1143

Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair
p.1147

12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
p.1151

High dI/dt Pulse Switching of 1.0 cm² SiC GTOs
p.1155

Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications
p.1159

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor
p.1163

Comparison of SiC Thyristors with Differently Etched JTEs
p.1167

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection
p.1171

Bipolar Degradation in 4H-SiC Thyristors
p.1175

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Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications

Abstract:

Silicon Carbide Anode Switched Thyristors (ASTs) overcome major limitations of conventional Si and SiC IGBT and GTO Thyristor solutions by providing robust, latch-up free turn-off at high currents, current saturation in the output characteristics, and a wide safe operating area (SOA) through series current controlled device turn-off. In this work, detailed static and switching characteristics of 6.5 kV-class SiC ASTs are reported, which include a low on-state voltage drop of 4 V at 100 A/cm², slight positive temperature co-efficient of Von, current saturation at > 100 A Cathode currents and fast turn-on and turn-off times of 500 ns while switching 1300 V and 20 A.