Bipolar Degradation in 4H-SiC Thyristors

Stanislav I. Soloviev; Peter A. Losee; Stephen Arthur; Zachary Stum; Jerome L. Garrett; Ahmed Elasser

doi:10.4028/www.scientific.net/MSF.717-720.1175

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Bipolar Degradation in 4H-SiC Thyristors

Bipolar Degradation in 4H-SiC Thyristors

Abstract:

Bipolar degradation in 4H-SiC thyristors subjected to high current density stress is reported. The thyristor device structure, its fabrication process as well as testing conditions are described. The Electron Beam Induced Current (EBIC) technique was used for defect analysis in testing of both degraded and non-degraded devices. Possible nucleation sites responsible for the generation of observed defects in degraded devices are discussed

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Materials Science Forum (Volumes 717-720)

Pages:

1175-1178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1175

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Online since:

May 2012

Authors:

Stanislav I. Soloviev, Peter A. Losee, Stephen Arthur, Zachary Stum, Jerome L. Garrett, Ahmed Elasser

Keywords:

Bipolar Degradation, EBIC, Stacking Fault, Thyristor

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