Comparison of SiC Thyristors with Differently Etched JTEs

Gontran Pâques; Sigo Scharnholz; Nicolas Dheilly; Dominique Planson; Rik W. De Doncker

doi:10.4028/www.scientific.net/MSF.717-720.1167

Paper Titles

12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
p.1151

High dI/dt Pulse Switching of 1.0 cm² SiC GTOs
p.1155

Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications
p.1159

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor
p.1163

Comparison of SiC Thyristors with Differently Etched JTEs
p.1167

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection
p.1171

Bipolar Degradation in 4H-SiC Thyristors
p.1175

Pulse Characterization of Optically Triggered SiC Thyristors
p.1179

Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications
p.1183

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Comparison of SiC Thyristors with Differently...

Comparison of SiC Thyristors with Differently Etched JTEs

Abstract:

This paper presents results attained with SiC GTO thyristors terminated by a single step and a graded etched JTE. The comparison of both types of devices reveals no significant difference in the on-state and switching characteristics but a higher blocking capability of some thyristors with the latter kind of termination. The best devices showed a forward breakdown voltage of nearly 6 kV, which is a distinct progress as against previous results of thyristors with a graded etched JTE. Furthermore, such GTO thyristors have been characterized dynamically for the first time.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1167-1170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1167

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Online since:

May 2012

Authors:

Gontran Pâques, Sigo Scharnholz, Nicolas Dheilly, Dominique Planson, Rik W. De Doncker

Keywords:

GTO, Ion Implantation, RIE, Silicon Carbide (SiC), Termination, Thyristor

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References

[1] S. Scharnholz, B. Vergne, J.-P. Konrath, G. Pâques, and V. Zorngiebel, Pulse current characterization of SiC GTO thyristors, Material Science Forum 679-680 (2011) 682-685.

DOI: 10.4028/www.scientific.net/msf.679-680.682

Google Scholar

[2] A.K. Agarwal, C. Capell, Q. Zhang et al., 9 kV, 1 cmx1 cm SiC super GTO technology development for pulsed power, Proc. of Int. IEEE Pulsed Power Conference (2009) 264-267.

DOI: 10.1109/ppc.2009.5386305

Google Scholar

[3] S.G. Sundaresan, H. Issa, D. Veereddy, and R. Singh, Large Area >8 kV SiC GTO thyristors with innovative anode-gate designs, Material Science Forum 645-648 (2010) 1021

DOI: 10.4028/www.scientific.net/msf.645-648.1021

Google Scholar

[4] R. Ghandi et al., Implantation-free low on-resistance 4H-SiC BJTs with common emitter current gain of 50 and high blocking capability, Material Science Forum 615-617 (2009) 833-836.

DOI: 10.4028/www.scientific.net/msf.615-617.833

Google Scholar

[5] G. Pâques, N. Dheilly, D. Planson, R.W. De Doncker, and S. Scharnholz, Graded etched junction termination for SiC thyristors, Materials Science Forum 679-680 (2011) 457-460.

DOI: 10.4028/www.scientific.net/msf.679-680.457

Google Scholar

[6] P. Brosselard, Conception, réalisation et caractérisation d'interrupteurs (thyristors et JFETs) haute tension (5 kV) en carbure de silicium, PhD dissertation, INSA de Lyon, 2004.

Google Scholar

[7] A. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, Study of avalanche breakdown and impact ionization in 4H silicon carbide, J. of Electronic Materials, vol. 27, (1998) 335-341.

DOI: 10.1007/s11664-998-0411-x

Google Scholar