Pulse Characterization of Optically Triggered SiC Thyristors

Nicolas Dheilly; Gontran Pâques; Sigo Scharnholz; Dominique Planson

doi:10.4028/www.scientific.net/MSF.717-720.1179

Paper Titles

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor
p.1163

Comparison of SiC Thyristors with Differently Etched JTEs
p.1167

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection
p.1171

Bipolar Degradation in 4H-SiC Thyristors
p.1175

Pulse Characterization of Optically Triggered SiC Thyristors
p.1179

Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications
p.1183

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C
p.1187

Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging
p.1191

Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics
p.1195

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Pulse Characterization of Optically Triggered SiC...

Pulse Characterization of Optically Triggered SiC Thyristors

Abstract:

This paper deals with the pulse capabilities of 4H-SiC optically triggered thyristors. The device structure and the fabrication process are presented. The results of pulse characterizations are shown. Two types of current pulses were used, a short (pulse width of 10 µs) and a long (pulse width of 650 µs). Peak current densities of 17 kA.cm-2 and 4 kA.cm-2 were attained with short and long pulses respectively. The failures and degradation caused by these experiments are also shown in this paper.

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Materials Science Forum (Volumes 717-720)

Pages:

1179-1182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1179

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Online since:

May 2012

Authors:

Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson

Keywords:

Light-Triggered Thyristor, LTT, Pulse Power, Silicon Carbide (SiC)

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References

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