Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics

Geunsik Lim; Tariq Manzur; Aravinda Kar

doi:10.4028/www.scientific.net/MSF.717-720.1195

Paper Titles

Pulse Characterization of Optically Triggered SiC Thyristors
p.1179

Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications
p.1183

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C
p.1187

Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging
p.1191

Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics
p.1195

Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments
p.1199

4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
p.1203

A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors
p.1207

Characterization of Poly-SiC Pressure Sensors for High Temperature and High Pressure Applications
p.1211

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Laser-Doped SiC as Wireless Remote Gas Sensor...

Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics

Abstract:

An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO₂, CO, NO₂ and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in these two states. Consequently, the refractive index of the substrate changes, which, in turn, modifies the reflectivity of the substrate. This change in reflectivity represents the optical signal of the sensor, which is probed remotely with a laser such as a helium-neon laser. Although the midwave infrared (3-5 mm) band is studied in this paper, the approach is applicable to other spectral bands.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1195-1198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1195

Citation:

Cite this paper

Online since:

May 2012

Authors:

Geunsik Lim, Tariq Manzur, Aravinda Kar

Keywords:

Laser Doping, Noncontact Sensor, Nonintrusive Sensor, Optical Sensor, Refractive Index

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Casady, R. Johnson, Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High-Temperature Applications: A Review, Solid-State Elecctron. 39 (1996) 1409-1422.

DOI: 10.1016/0038-1101(96)00045-7

Google Scholar

[2] R. Loloee, B. Chorpening, S. Beer, R.N. Ghosh, Hydrogen Monitoring for Power Plant Applications Using SiC Sensors, Sens. Actuat. B 129 (2008) 200-210.

DOI: 10.1016/j.snb.2007.07.118

Google Scholar

[3] P.G. Neudeck, D.J. Spry, A.J. Trunek, L.J. Evans, L. Chen, G.W. Hunter, D. Androjna, "Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers", Mat. Sci. Forum 600-603 (2009) 1199-1202.

DOI: 10.4028/www.scientific.net/msf.600-603.1199

Google Scholar

[4] A. Spetz, P. Tobias, L. Uneus, H. Svenningstorp, L. Ekedahl, I. Lundstrom, High Temperature Catalytic Metal Field Effect Transistors for Industrial Applications, Sens. Actuators B 70 (2000) 67-76.

DOI: 10.1016/s0925-4005(00)00559-1

Google Scholar

[5] G. Lim, U.P. DeSilva, N.R. Quick, A. Kar, Laser optical gas sensor by photoexcitation effect on refractive index, Appl. Opt. 49 (2010) 1563-1573.

DOI: 10.1364/ao.49.001563

Google Scholar

[6] A. Lebedev, Deep Level Centers in Silicon Carbide: A Review, Semiconductors 33 (1999) 107-130.

DOI: 10.1134/1.1187657

Google Scholar

[7] S. Bet, N.R. Quick, A. Kar, Laser doping of chromium as a double acceptor in silicon carbide with reduced crystalline damage and nearly all dopants in activated state, Acta Materiallia 56 (2008) 1857-1867.

DOI: 10.1016/j.actamat.2007.12.047

Google Scholar