4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Stéphane Biondo; Laurent Ottaviani; Mihai Lazar; Dominique Planson; Julian Duchaine; V. Le Borgne; M.A. El Khakani; Frédéric Milesi; Wilfried Vervisch; Olivier Palais; Frank Torregrosa

doi:10.4028/www.scientific.net/MSF.717-720.1203

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4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-7204H-SiC P+N UV Photodiodes : A Comparison between...

4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Abstract:

This paper presents a study of 4H-SiC UV photodetectors based on p+n thin junctions. Two kinds of p+ layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent annealing) on the device characteristics. Aluminum and Boron dopants have been introduced by beam line and by plasma ion implantation, respectively. Dark currents are lower with Al-implanted diodes (2 pA/cm2 @ - 5 V). Accordingly to simulation results concerning the influence of the junction thickness and doping, plasma B-implanted diodes give rise to the best sensitivity values (1.5x10-1 A/W @ 330 nm).

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1203-1206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1203

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Online since:

May 2012

Authors:

Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, V. Le Borgne, M.A. El Khakani, Frédéric Milesi, Wilfried Vervisch, Olivier Palais, Frank Torregrosa

Keywords:

Dark Current, FDTD, Plasma Implantation, Sensitivity, UV Photodiode

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