Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging

Jennifer C. Xu; Gary W. Hunter; Liang Yu Chen; Azlin M. Biaggi-Labiosa; Benjamin J. Ward; Dorothy Lukco; Jose M. Gonzalez III; Peter S. Lampard; Michael A. Artale; Christopher L. Hampton

doi:10.4028/www.scientific.net/MSF.717-720.1191

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Development of High Temperature SiC Based...

Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging

Abstract:

This paper describes efforts towards the transition of existing high temperature hydrogen and hydrocarbon Schottky diode sensor elements to packaged sensor structures that can be integrated into a testing system. Sensor modifications and the technical challenges involved are discussed. Testing of the sensors at 500°C or above is also presented along with plans for future development.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1191-1194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1191

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Online since:

May 2012

Authors:

Jennifer C. Xu, Gary W. Hunter, Liang Yu Chen, Azlin M. Biaggi-Labiosa, Benjamin J. Ward, Dorothy Lukco, Jose M. Gonzalez III, Peter S. Lampard, Michael A. Artale, Christopher L. Hampton

Keywords:

High-Temperature, Hydrogen/Hydrocarbon Sensors, Schottky Diode, Silicon Carbide (SiC)

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References

[1] G.W. Hunter, J. C. Xu, and D. Lukco, US Patent 7,389,675B1 (2008).

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DOI: 10.1149/1.2981136

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DOI: 10.2514/6.2010-3327

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