Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C

Ruby N. Ghosh; Reza Loloee

doi:10.4028/www.scientific.net/MSF.717-720.1187

Paper Titles

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection
p.1171

Bipolar Degradation in 4H-SiC Thyristors
p.1175

Pulse Characterization of Optically Triggered SiC Thyristors
p.1179

Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications
p.1183

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C
p.1187

Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging
p.1191

Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics
p.1195

Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments
p.1199

4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
p.1203

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Characterization of Large Area 4H-SiC and 6H-SiC...

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C

Abstract:

SiC based capacitive devices have the potential to operate in high temperature, chemically corrosive environments provided that the electrical integrity of the gate oxide and metallization can be maintained in these environments. We report on the performance of large area, up to 8 x 10^-3 cm², field-effect capacitive sensors fabricated on both the 4H and 6H polytypes at 600°C. Large area capacitors improve the signal/noise (S/N) ratio which is proportional to the slope of the capacitance-voltage characteristic. At 600 °C we obtain a S/N ~ 20. The device response is independent of polytype, either 4H or 6H-SiC. These results demonstrate the reliability of our field-effect structure, operating as a simple potentiometer at high temperature.