High Temperature Silicon Carbide Power Modules for High Performance Systems

Alexander B. Lostetter; J. Hornberger; B. McPherson; J. Bourne; R. Shaw; E. Cilio; W. Cilio; B. Reese; E. Heinrichs; Ty McNutt; Marcelo Schupbach

doi:10.4028/www.scientific.net/MSF.717-720.1219

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4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
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A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors
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Characterization of Poly-SiC Pressure Sensors for High Temperature and High Pressure Applications
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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator
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High Temperature Silicon Carbide Power Modules for High Performance Systems
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10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies
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A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter
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Performance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720High Temperature Silicon Carbide Power Modules for...

High Temperature Silicon Carbide Power Modules for High Performance Systems

Abstract:

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1219-1224

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1219

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Online since:

May 2012

Authors:

Alexander B. Lostetter, J. Hornberger, B. McPherson, J. Bourne, R. Shaw, E. Cilio, W. Cilio, B. Reese, E. Heinrichs, Ty McNutt, Marcelo Schupbach

Keywords:

Hermetically Sealed, High Performance, High Power, High Reliability, Low Parasitic, Power Module

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References

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