10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies

Abstract:

The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. Twenty-four MOSFETs and twelve JBS diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1225-1228
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1225
• Online since: May 2012
• Authors: Mrinal K. Das, David Grider, Scott Leslie, Ravi Raju, Michael Schutten, Allen Hefner
• Keywords: Junction Barrier Schottky (JBS) Diode, MOSFET, Power Module, SSPS

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