SiC JFET Power Modules for Reliable 250°C Operation

David C. Sheridan; Jeff B. Casady; Tracy Autry; Rizal Aguirre; Victor Lee; R. Wayne Johnson; Michael J. Palmer; James Scofield

doi:10.4028/www.scientific.net/MSF.717-720.1229

Paper Titles

Characterization of Poly-SiC Pressure Sensors for High Temperature and High Pressure Applications
p.1211

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator
p.1215

High Temperature Silicon Carbide Power Modules for High Performance Systems
p.1219

10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies
p.1225

SiC JFET Power Modules for Reliable 250°C Operation
p.1229

A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter
p.1233

Performance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky Diodes
p.1237

Switching Losses in a SiC-Based DC-DC Multilevel Boost Converter
p.1241

High Voltage SiC Schottky Diodes in Rectifiers for X-Ray Generators
p.1245

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720SiC JFET Power Modules for Reliable 250°C...

SiC JFET Power Modules for Reliable 250°C Operation

Abstract:

An all SiC 600V / 6 m hermetic half-bridge power module has been developed to operate at ambient temperatures of 200oC and with junction temperatures near 250oC. The modules use SiC trench JFET technology and can output over 100A at Tj=250oC. Double pulsed switching was performed up to temperatures of 150oC with a measured total switching energy of 0.73mJ