High Voltage SiC Schottky Diodes in Rectifiers for X-Ray Generators

Abstract:

Silicon-Carbide-based semiconductors offer realization of efficient high voltage components, with high switching speed and low conduction losses. SiC Schottky diodes with safe blocking capability of at least 4 kV were produced and characterized. A simulation model for loss determination was developed. Real losses were determined on a small scale test setup and chip temperature distribution was obtained from that, combined with FEM calculation. A full-size rectifier 100 kW/140 kV-SiC-rectifier module with six times higher power density than with conventional Si-technology was realized.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1245-1248
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1245
• Online since: May 2012
• Authors: Peter Lürkens, P. Guimaraes, Philippe Godignon, José Millán
• Keywords: Behavioral Model, Cascade Rectifier, Schottky Diode, Silicon Carbide (SiC), Voltage Multiplier, X-Ray Generator

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