300C Capable Digital Integrated Circuits in SiC Technology

Abstract:

This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1261-1264
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1261
• Online since: May 2012
• Authors: Amita Patil, Naresh Rao, Vinayak Tilak
• Keywords: High Temperature Integrated Circuit (IC), High Temperature Techniques, n-Channel MOS IC, Silicon Carbide (SiC), Wide Band Gap Semiconductor IC

References

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