Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator

Abstract:

This paper reports on direct frequency modulation of a RF Colpitts oscillator, realised from silicon carbide devices and proprietary components, capable of transmitting sensor data whilst operating at 300°C. Utilizing a reversed biased Schottky diode as a varactor in an LC oscillator, it is possible to modulate the frequency of an RF carrier by applying external voltage signals. These experiments have shown that a 10V bias will increase the frequency by as much as 10%, however signals as low as 10mV are easily detectable with standard silicon receivers.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1269-1272
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1269
• Online since: May 2012
• Authors: Daniel Brennan, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall
• Keywords: Colpitts, Frequency Modulation, Oscillator, Radio Transmission, RF, VCO

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