Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Balaji Raghothamachar; Rafael Dalmau; Baxter Moody; H. Spalding Craft; Raoul Schlesser; Jin Qiao Xie; Ramón Collazo; Michael Dudley; Zlatko Sitar

doi:10.4028/www.scientific.net/MSF.717-720.1287

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Low Defect Density Bulk AlN Substrates for High...

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Abstract:

Using the physical vapor transport (PVT) method, single crystal boules of AlN have been grown and wafers sliced from them have been characterized by synchrotron white beam X-ray topography (SWBXT) in conjunction with optical microscopy. X-ray topographs reveal that the wafers contain dislocations that are inhomogeneously distributed with densities varying from as low as 0 cm^-2 to as high as 10⁴ cm^-2. Two types of dislocations have been identified: basal plane dislocations and threading dislocations, both having Burgers vectors of type 1/3<112-0> indicating that their origin is likely due to post-growth deformation. In some cases, the dislocations are arranged in low angle grain boundaries. However, large areas of the wafers are nearly dislocation-free and section X-ray topographs of these regions reveal the high crystalline perfection.

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Materials Science Forum (Volumes 717-720)

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1287-1290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1287

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Online since:

May 2012

Authors:

Balaji Raghothamachar, Rafael Dalmau, Baxter Moody, H. Spalding Craft, Raoul Schlesser, Jin Qiao Xie, Ramón Collazo, Michael Dudley, Zlatko Sitar

Keywords:

Aluminum Nitride (AlN), Bulk Growth, Dislocation, Physical Vapor Transport, X-Ray Topography

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