Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues

Chwan Ying Lee; Yung Hsiang Chen; Lurng Shehng Lee; Chien Chung Hung; Cheng Tyng Yen; Suh Fang Lin; Rong Xuan; Wei Hung Kuo; Tzu Kun Ku; Ming Jinn Tsai

doi:10.4028/www.scientific.net/MSF.717-720.1303

Paper Titles

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics
p.1287

Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals
p.1291

Evolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after Annealing
p.1295

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage
p.1299

Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
p.1303

Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs
p.1307

Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
p.1311

Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
p.1315

Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
p.1319

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Performance Comparison of GaN Power Transistors...

Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues

Abstract:

One normally-on N-channel AlGaN/GaN device and two types of normally-off GaN devices have been studied. The normally-on device with Sapphire substrate shows good I_dsat and breakdown characteristics, but the gate leakage current is quite large. The first normally-off GaN hybrid metal insulator semiconductor – high electron mobility transistor (MIS-HEMT) grown on Si substrate exhibits good performance with positive threshold voltage of 3V and the breakdown voltage of over 1800V. However the second normally-off GaN MOSFET structure is rather difficult to exhibit good blocking characteristic compared to GaN MIS-HEMT device due to inadequate device design.